| 摘要 |
PROBLEM TO BE SOLVED: To enhance a characteristic of a transistor constituting, for example, a peripheral circuit, in an electro-optical device such as a liquid crystal device. SOLUTION: This electro-optical device is provided, on a substrate 10, with a plurality of pixel electrodes 9a, a semiconductor layer 74 provided in a peripheral area positioned in the periphery of a pixel area arrayed with the plurality of pixel electrodes and having (i) a plurality of channel areas 74C having respectively channel lengths along a first direction (X-direction) on the substrate, and formed to be juxtaposed with a prescribed space along the second direction (Y-direction) crossed with the first direction, and a source area 74S and a drain area 74D connected respectively. electrically and commonly to the plurality of channel areas, and (ii) a transistor 71 having a gate electrode 71G extended along the second direction so as to be overlapped with the plurality of channel areas. COPYRIGHT: (C)2009,JPO&INPIT |
