| 摘要 |
A nitride semiconductor device includes a RESURF layer containing p-type InxGa1-xN (0<x<=1); a channel layer, formed on this RESURF layer, containing InyGa1-yN (0<=y<x); a barrier layer including a nitride semiconductor layer, formed on this channel layer, having a wider energy gap than the channel layer; and a prescribed electrode.
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