发明名称 FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a flash memory device in which an area occupied by a fuse circuit is reduced. <P>SOLUTION: The flash memory device includes: a memory cell array having memory cells for storing data and store initial data in a part of the memory cells; a page buffer section configured to have page buffer circuits for providing data to be programmed in the memory cells or reading the data stored in the memory cells; a controller which controls the page buffer section so that the initial data stored in the memory cell array are read when operation of the flash memory device is started, judges error of the read initial data, and corrects the error of the initial data; and an initial data latching section for latching the initial data of which the error is corrected by the controller. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009043389(A) 申请公布日期 2009.02.26
申请号 JP20080033951 申请日期 2008.02.15
申请人 HYNIX SEMICONDUCTOR INC 发明人 CHA JAE WON;WON SAM KYU;BAEK KWANG HO
分类号 G11C29/42;G11C16/02;G11C16/06 主分类号 G11C29/42
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