| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process model generation method, a process model generation program and a pattern correction method by which a pattern correction accuracy can be improved. <P>SOLUTION: The process model generation method comprises processes of: exposing a test mask having a mask pattern formed therein to form a test pattern in a processed film; creating a plurality of process models having different model parameters; simulating the mask pattern by using the plurality of process models to predict a plurality of model patterns; calculating dimensional differences between the test pattern and the respective plurality of model patterns; extracting a model pattern in the plurality of model patterns, the model pattern giving the dimensional difference from the test pattern within a specification range; and defining the process model in which the extracted model pattern is predicted by each piece of pattern information of the mask pattern. <P>COPYRIGHT: (C)2009,JPO&INPIT |
