NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a normally-off nitride semiconductor element and a manufacturing method of the same. SOLUTION: The CAVET includes an n+-type GaN substrate 1, an insulating film 2 having an opening 3 formed on a main face 1a of the substrate, and a nitride semiconductor lamination structure part 4. The nitride semiconductor lamination structure part 4 includes sequentially laminated an n--type GaN layer 5 and an n+-type AlGaN layer 6 having a different lattice constant from that of the n--type GaN layer 5 with its parallel face 7 and faces parallel to a +c axial side inclination face 8 and an -c axial side inclination face 9 as a lamination interface 15. A gate electrode 10 is formed so as to oppose to the -c axial side inclination face 9, and a source electrode 11 is electrically connected to the n+-type AlGaN layer 6. A drain electrode is electrically connected to the n+-type GaN substrate 1. COPYRIGHT: (C)2009,JPO&INPIT