| 摘要 |
PROBLEM TO BE SOLVED: To enhance a manufacturing accuracy of a barrier wall between gate electrodes of a monolayer gate electrode structure. SOLUTION: A concavo-convex structure is formed on a silicon substrate 20 by patterning a first silicon oxide film 32 formed through an insulating film, a silicon nitride film 34 is formed on the surface of the concavo-convex structure, a plurality of barrier walls are formed by removing a first and a second silicon oxide film 32, 35 by polishing and etching so as to leave a part positioning at the side surface 12b of the concavo-convex structure out of the silicon nitride film 34 after forming the second silicon oxide film 35 on the silicon nitride film 34 so as to bury the concave part of the concavo-convex structure, and further a barrier wall is reformed by oxidizing the surface layer of the barrier wall by heat treatment. This decreases the corrosion of the barrier wall by the cleaning process to improve the manufacturing accuracy of the barrier wall. The barrier wall is in the state of silicon nitride at the time of cleaning process, and has a high resistance property (fluorinated acid resistance) for the fluorinated acid used for the cleaning. COPYRIGHT: (C)2009,JPO&INPIT
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