发明名称 |
Precursor composition for porous film and method for preparing the composition, porous film and method for preparing the porous film, and semiconductor device |
摘要 |
A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR1)4 and Ra(Si)(OR2)4-a (in the formulas, R1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250° C.; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength. A semiconductor device prepared using the porous film.
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申请公布号 |
US2009053503(A1) |
申请公布日期 |
2009.02.26 |
申请号 |
US20060886952 |
申请日期 |
2006.03.17 |
申请人 |
FUJII NOBUTOSHI;NAKAYAMA TAKAHIRO;KANAYAMA TOSHIHIKO;KOHMURA KAZUO;TANAKA HIROFUMI |
发明人 |
FUJII NOBUTOSHI;NAKAYAMA TAKAHIRO;KANAYAMA TOSHIHIKO;KOHMURA KAZUO;TANAKA HIROFUMI |
分类号 |
B32B3/26;B05D3/02;C09D7/12;C09D171/02 |
主分类号 |
B32B3/26 |
代理机构 |
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