| 摘要 |
A fuse circuit and a flash memory device including the same are provided to reduce an occupied area thereof by using a cell fuse having an area smaller than an area of a fuse. A plurality of memory cells are turned on or off by a first voltage according to a programming state. A switching element switches a verification signal for verifying a program of a memory cell according to a control signal(CT) and inputs the switched verification signal into the memory cell. A cell control unit(293) outputs the verification signal for controlling the program, verification, and erasure of the memory cell and the control signal of the switching element.
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