发明名称 POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD
摘要 A positive photoresist composition comprises: a compound capable of generating an acid upon irradiation with an actinic ray or a radiation, in which the compound contains (A1) a sulfonate compound of a sulfonium, and (A2) a sulfonate compound of an N-hydroxyimide or a disulfonyldiazomethane compound; and a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developing solution, in which the resin contains a repeating unit having a specific lactone structure.
申请公布号 KR100885691(B1) 申请公布日期 2009.02.26
申请号 KR20020018519 申请日期 2002.04.04
申请人 发明人
分类号 G03F7/039;C08F20/12;G03F7/004;H01L21/027 主分类号 G03F7/039
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