| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of an element by suppressing negative capacitance. SOLUTION: An insulating gate type semiconductor device 10 is provided with: a first-conductivity-type semiconductor layer 13; a plurality of trenches 14A, 14B, 14C and 14D prepared on the face of the semiconductor layer 13 with a predetermined pitch; a second-conductivity-type base layer 17 formed between the trenches 14A and 14B; second-conductivity-type dummy base layers 34, 35 formed between the trenches 14B, 14C and 14D and having a diffusion depth larger than that of the base layer 17; gate electrodes 16A, 16B, 16C and 16D each formed by embedding a conductor into each of the trenches 14A, 14B, 14C and 14D via an insulating film 15; emitter layers 19A and 19B formed on the surface of the base layer 17; and a second-conductivity-type collector layer 11 formed on the other surface of the semiconductor layer 13. COPYRIGHT: (C)2009,JPO&INPIT
|
