发明名称 |
Method of depositing a diffusion barrier layer which provides an improved interconnect |
摘要 |
A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.
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申请公布号 |
US2009053888(A1) |
申请公布日期 |
2009.02.26 |
申请号 |
US20080288540 |
申请日期 |
2008.10.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
DING PEIJUN;XU ZHENG;ZHANG HONG;TANG XIANMIN;GOPALRAJA PRABURAM;RENGARAJAN SURAJ;FORSTER JOHN C.;FU JIANMING;CHIANG TONY;YAO GONGDA;CHEN FUSEN E.;CHIN BARRY L.;KOHARA GENE Y. |
分类号 |
H01L21/4763;C23C14/06;C23C14/16;C23C14/32;H01L21/285;H01L21/31;H01L21/44;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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