| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To effectively prevent interference effects of a capacity between adjacent bit lines in writing in a flash memory cell. <P>SOLUTION: During a programming operation of a cell coupled to an even bit line, program verifying is carried out by using a verifying voltage lower than a program operation voltage of a cell coupled to an odd bit line. Then, based on interference effect between adjacent bit lines during the program operation of the cell coupled to the odd bit line, a threshold value voltage distribution of the cell coupled to the even bit line is moved to a normal value, and threshold value distributions of the cells coupled to the even bit line and to the odd bit line are made uniform. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
