| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with a manufacturing method thereof, capable of appropriately and easily cutting a fuse layer even if an element pattern dimension is micronized, for improved productivity. SOLUTION: A semiconductor integrated circuit device (semiconductor device)1 includes an insulating film 2, and a plurality of fuse layers 4 which are formed parallel to each other with a specified interval on the insulating film 2 and can be cut by radiating laser beam. In the insulating film 2, a recess 2b is formed at least at the lower portion of the plurality of fuse layers 4 that are irradiated with laser beam, and the plurality of fuse layers 4 are so formed as to stride over the recess 2b. A recess 4d corresponding to the shape of the recess 2b is formed above the recess 2b, at each fuse layer 4. COPYRIGHT: (C)2009,JPO&INPIT
|
