| 摘要 |
PROBLEM TO BE SOLVED: To securely solve a desired element component in a quantum dot by changing a gas flow sequence by a liquid drop epitaxy method using metal organic vapor phase epitaxy. SOLUTION: After a base layer 2 is formed on a base 1, the temperature of the base 1 is lowered from base layer formation temperature to dot formation temperature while a P-component atmosphere is produced in a reaction chamber. While the base 1 is held at the dot formation temperature, an atmosphere containing an As component and a P component is produced in the reaction chamber and held for a prescribed time. Consequently, the As component and P component 5 are made present on the base layer 2. Then an atmosphere containing an In component is produced in the reaction chamber to form liquid drops which consist of the In component and in which the As component and P component are dissolved, and the liquid drops are crystallized to form quantum dots consisting of InAsP. COPYRIGHT: (C)2009,JPO&INPIT
|
