| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor-phase growth method and a vapor-phase growth device, which can easily reduce impurity contaminations such as oxygen etc., on an epitaxial layer. SOLUTION: In the vapor phase growth method, a substrate (4) is installed in a growth furnace (1) using instruments (3, 5) for growth and a necessary group III material, group V material, gas for dilution, and dopant material are supplied onto the substrate (4) having been heated to laminate and grow an epitaxial layer of a compound semiconductor on the substrate (4). The instruments (3, 5) for growth are used which are made of carbon of 1.80 to 1.85 Mg/m<SP>3</SP>in bulk density. COPYRIGHT: (C)2009,JPO&INPIT
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