发明名称 |
Non-volatile memory device including charge trap layer and method of manufacturing the same |
摘要 |
Provided are a non-volatile memory device and a method of manufacturing the non-volatile memory device. The non-volatile memory device includes a charge trap layer having a crystalline material. In the method, a tunneling insulating layer is formed on a substrate, and a crystalline charge trap layer is formed on the tunneling insulating layer.
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申请公布号 |
US2009050954(A1) |
申请公布日期 |
2009.02.26 |
申请号 |
US20080071351 |
申请日期 |
2008.02.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI SANG-MOO;SEOL KWANG-SOO;PARK SANG-JIN;SUNG JUNG-HUN |
分类号 |
H01L29/792;H01L21/28 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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