| 摘要 |
<p>The invention concerns a microlithographic projection exposure method, wherein the method comprises the following steps: providing a substrate (210, 410), to which a light-sensitive first resist (220, 420) is at least partially applied, providing a microlithographic projection exposure apparatus, producing an auxiliary grating structure (240a, 430a) by means of the projection exposure apparatus, wherein said auxiliary grating structure (240a, 430a) is produced upstream of the first resist (220, 420) in the light propagation direction, providing a mask and projecting, using the auxiliary grating structure (240a, 430a), at least a part of the mask onto a region of the first resist (220, 420) by means of the projection exposure apparatus.</p> |
