| 摘要 |
<p>A manufacturing method of a nonvolatile memory device is provided to increase distance between a selective line and a word line by forming a trench on a semiconductor substrate between the selective line and the word line. A tunnel insulating film(104), a first conductive film(106), and a dielectric film(108) are formed on an active region of a semiconductor substrate. A first contact hole is formed by removing a part of the dielectric film of a selective line forming region. A second contact hole is formed by removing a part of the dielectric film between a selective line and a word line. A second conductive film is formed on the dielectric film. The second conductive film is etched by a first etching process. The dielectric film exposed by the first etching process is removed by a second etching process. The first conductive film exposed by the second etching process is removed by a third etching process. A trench is formed on the semiconductor substrate of a region corresponding to the second contact hole.</p> |
