FLASH MEMORY DEVICE AND PROGRAM METHODS THEREOF, AND MEMORY SYSTEM AND COMPUTER SYSTEM INCLUDING THE SAME

摘要

A flash memory device, a programming method thereof, and a memory system and a computer system including the same are provided to perform a program with a high speed and to prevent/minimize a change of threshold voltages of flash memory cells. A memory cell array(110) includes memory cells which are arranged according to word lines and bit lines. A voltage generation circuit(160) generates word line voltages applied to the word lines and bulk voltages applies to bulks including the memory cells. A decoding circuit(120) drives the word lines by using the word line voltages. A read/write circuit(130) reads data from the programmed memory cells. A control logic controls the voltage generation circuit, the decoding circuit, and the read/write circuit in order to perform a program operation, a verification operation or a charge rearrangement/recombination operation for a plurality of pages in each program loop in a parallel manner.