SEMICONDUCTOR MODULE, POWER SEMICONDUCTOR MODULE, POWER SEMICONDUCTOR STRUCTURE, MULTILAYER SUBSTRATE, MANUFACTURING METHOD OF POWER SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD OF MULTILAYER SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a substrate which is not easily curved and is excellent in heat radiation efficiency, and to provide a power semiconductor module.

SOLUTION: The power semiconductor module 1 is disclosed. One embodiment includes the multilayer substrate 3 having a plurality of metal layers 11, 12 and 13 and a plurality of ceramic layers 21 and 22, where the ceramic layers are located between the metal layers. The power semiconductor module 1 may be pressed directly against a heat sink 9 with the multilayer substrate 3 ahead.

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