| 摘要 |
PROBLEM TO BE SOLVED: To conveniently and accurately manufacture a vertical MOSFET capable of preventing the generation of junction leakage current caused by GIDL. SOLUTION: An insulating film 1 thicker than a gate insulating film is formed between a gate electrode and a lower dopant diffusion region. An insulating film A or insulating film B thicker than the gate insulating film is each formed among the gate electrode, the lower dopant diffusion region, and an upper dopant diffusion region. COPYRIGHT: (C)2009,JPO&INPIT
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