发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To form a capacitor for a noise reduction measure with excellent transient response at an excellent yield. SOLUTION: A capacitor insulating film CZ is formed by depositing a silicon nitride film on wiring Ma to which a power supply potential (VDD) is applied and wiring Mb to which a ground potential (GND) is applied, and a floating electrode FE is formed by depositing a tungsten film on the capacitor insulating film CZ and etching it. The floating electrode FE extends in a divided state on the wiring Ma and Mb. Power noise can be reduced by the capacitors Ca<SB>1</SB>and Ca<SB>2</SB>comprising the wiring Ma and Mb, the capacitor insulating film CZ and the floating electrode FE. Also, since the floating electrode FE is divided, the yield can be improved. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009044183(A) 申请公布日期 2009.02.26
申请号 JP20080273673 申请日期 2008.10.24
申请人 RENESAS TECHNOLOGY CORP 发明人 MITANI SHINICHIRO
分类号 H01L21/8244;H01L21/822;H01L27/04;H01L27/10;H01L27/11 主分类号 H01L21/8244
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