| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory element improving electrical properties of the element by suppressing a leakage current which flows through a memory cell by turning off a drain select transistor, a source select transistor, and a side transistor of an unselected memory cell block when the semiconductor memory element operates. <P>SOLUTION: The semiconductor memory element includes a memory cell block in which a plurality of memory cells, drain and source select transistors, and side word line transistors are connected in a string structure, a block decoder for outputting a block select signal in response to pre-decoded address signals and controlling the drain and source select transistors and the side word line transistors, and a block switch for connecting a global word line to word lines of the memory cell block in response to the block select signal. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
