| 摘要 |
A fuse circuit in a flash memory device is disclosed. The fuse circuit includes a plurality of memory cells turned on/off by a first voltage in accordance with program state, a switching circuit configured to switch in response to a control signal, thereby transmitting a verifying signal for verifying program of the memory cell to the memory cell, and a cell controller configured to output the verifying signal for controlling program, verification and erase of the memory cells and the control signal.
|
