SEMICONDUCTOR DEVICE SOURCE AND DRAIN REGIONS FORMED UTILIZING DUAL CAPPING LAYERS AND SPLIT THERMAL PROCESSES

摘要

Source and drain regions are formed (102) in a first-type semiconductor device. Then, a high tensile stress capping layer is formed over the source and drain regions (104). A thermal process is then performed (106) to re-crystallize the source and drain regions and to introduce tensile strain into the source and drain regions of the first-type semiconductor device. Afterwards, source and drain regions are formed in a second- type semiconductor device (108). Then, a high compressive stress capping layer is formed over the source and drain regions of the second-type semiconductor device (110). A thermal process is performed (112) to re-crystallize the source and drain regions and to introduce compressive strain into the source and drain regions of the second-type semiconductor device.