APPARATUS AND METHOD FOR PRODUCING EPITAXIAL LAYERS

摘要

An apparatus and process for plasma enhanced chemical vapor deposition with an inductively coupled plasma with ion densities above 1010 cm-3 and energies below 20 eV at the substrate enables epitaxial deposition of group IV and compound semiconductor layers at high rates and low substrate temperatures. The epitaxial reactor allows for in-situ plasma cleaning by chlorine and fluorine containing gaseous species.