| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide technology for avoiding or reducing possibility that data are unintentionally rewritten by repeatedly reading the data from a nonvolatile memory. <P>SOLUTION: An ECC (Error Correction Code) circuit 26 generates a first syndrome about writing data before writing in a memory is performed. An EDC (Error Detection Code) circuit 27 generates a second syndrome about confirmation reading data after the writing in the memory is performed. The EDC circuit 27 detects an error by only a "Read Disturb" phenomenon by use of the second syndrome, about the data scanned from the memory. The ECC circuit 26 detects the error by the "Read Disturb" phenomenon and a "Program Disturb" phenomenon by use of the first syndrome, about the data detected with the error by only the "Read Disturb" phenomenon, and corrects the error. Thereby, a circuit scale can be reduced, and a processing time is reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT |
