| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for growing a group III nitride crystal capable of growing a group III nitride crystal which has a practical size for producing devices such as a high-performance light emitting diode and an LD, is inexpensive, and has high quality. <P>SOLUTION: A mixed melt 103 comprising Ga as a group III metal and Na as an alkali metal is received in a mixed melt holding container 102. When the purity of Na is 99%; the purity of Ga is 99.9999%; the purity of nitrogen gas is 99.999%; and the material of the mixed melt holding container 102 is a BN as a sintered compact, a solid substance 110 has a shape with a hole 111 perforated in a part thereof. When nitrogen dissolves into the mixed melt 103 through the hole 111, a single crystal 109 of GaN as a group III nitride can be grown in the mixed melt 103. <P>COPYRIGHT: (C)2009,JPO&INPIT |
