| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device such that junction temperature is hard to rise during operation. <P>SOLUTION: The semiconductor device has a semiconductor chip 12, a base member 11 to which the semiconductor chip 12 is joined, and a metal multilayered film 13 formed between the semiconductor chip 12 and base member. The metal multilayered film 13 is made of a material having a thermal conductivity of ≥100 W/m K. <P>COPYRIGHT: (C)2009,JPO&INPIT |
