发明名称 |
PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, AND SOLID-STATE IMAGING DEVICE |
摘要 |
A photoelectric conversion element is provided and includes a photoelectric conversion portion. The photoelectric conversion portion includes: a pair of electrodes; and a photoelectric conversion layer between the pair of electrodes, and at least part of the photoelectric conversion layer includes a mixed layer of a p-type organic semiconductor and a fullerene, and a mixing ratio of the fullerene to the p-type organic semiconductor in terms of thickness ratio is less than 1:1.
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申请公布号 |
US2009050881(A1) |
申请公布日期 |
2009.02.26 |
申请号 |
US20080195213 |
申请日期 |
2008.08.20 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
HAYASHI MASAYUKI |
分类号 |
H01L51/00;H01L21/00;H01L27/146;H01L31/10;H01L51/42;H04N5/335;H04N5/361;H04N5/369 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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