| 摘要 |
A semiconductor storage device is provided with a semiconductor substrate, an embedded insulating film arranged on a part of the upper surface of the semiconductor substrate, and a semiconductor layer (5) arranged on other part on the upper surface of the semiconductor substrate. Each of memory cell transistors (MT11, MT12, MT1n, MT21, MT22, MT2n, MT31, MT32, MT3n and so on to MTm1, MTm2, MTmn) is provided with a first conductivity type source region, a first conductivity type drain region and a first conductivity type channel region, which are specified on a semiconductor layer (5) in a column direction, and a gate section arranged on a side surface in the channel region in the row direction. |
