MULTI-LEVEL NONVOLATILE MEMORY DEVICE, PROGRAM METHOD THEREOF, AND FABRICATING METHOD THEREOF
摘要
<p>A multi-level nonvolatile memory device, a program method thereof, and a fabricating method thereof are provided to heighten the reliability of the program operation by forming a plurality of bottom electrodes on the top of the substrate. A plurality of bottom electrodes(110) are formed on a substrate(100). The first insulating layer pattern(120) comprises a plurality of first openings(122) which are formed on the top of the substrate, and open a plurality of bottom electrodes. A plurality of bottom electrode contacts(130) are formed inside the first openings and on the bottom electrodes. A plurality of phase change material patterns(140) are formed inside the plurality of first openings and on the plurality of bottom electrode contacts. A plurality of upper electrode contacts(150) are formed on a plurality of phase change material patterns. The second insulating layer pattern(160) is formed on the first insulating layer pattern and the plurality of upper electrode contacts.</p>
申请公布号
KR20090020391(A)
申请公布日期
2009.02.26
申请号
KR20070085126
申请日期
2007.08.23
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
AN, HYEONG GEUN;CHO, SUNG LAE;SHIN, JONG CHAN;AHN, DONG HO;PARK, HYE YOUNG;KO, HAN BONG;PARK, YOUNG LIM