| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that can maintain a leakage current reduction effect in a memory block in an inactive state while eliminating unnecessary current-consuming operation. SOLUTION: The semiconductor memory device has a main word decoder that sets a selected main word line to a first potential and sets a non-selected main word line to a second potential or a third potential, a periodic signal generating circuit that generates a periodic signal indicating timing at predetermined time intervals, a block selection circuit that selects a memory block to be accessed, and a sequential selection circuit that sequentially selects a plurality of memory blocks one by one, wherein the main word decoder is controlled so that the main word line of the memory block selected by the block selection circuit is set to a third potential, the main word line is maintained at the third potential after being accessed, and the main word line of the memory block selected by the sequential selection circuit is set to the second potential at the timing indicated by the periodic signal. COPYRIGHT: (C)2009,JPO&INPIT |
