| 摘要 |
PROBLEM TO BE SOLVED: To provide a treatment method for a wafer that can secure quality of a device even when the wafer is formed to a thin thickness and have an electrode, buried in the device, projected from a rear surface of the wafer. SOLUTION: The treatment method for the wafer includes a division groove forming step of forming a division groove 201 of depth corresponding to a finish thickness of the device 22 along a street, an annular groove forming step of forming an annular groove 202 of depth corresponding to the finish thickness of the device along a boundary part between a device area 220 and an outer peripheral excessive area 230, a protective member sticking step of sticking a protective member 4 on a surface of the wafer, a rear surface grinding step of grinding the rear surface of the wafer corresponding to the device area of a substrate to expose the division groove and annular groove on the rear surface of the substrate of the wafer, and forming an annular reinforcement part 230b in an area corresponding to the outer peripheral excessive area, and a rear surface etching step of etching the rear surface of the substrate of the wafer to project an electrode 222 from the rear surface of the substrate. COPYRIGHT: (C)2009,JPO&INPIT
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