| 摘要 |
PROBLEM TO BE SOLVED: To lessen an occupation area of a dummy capacitor and to enlarge a variation width of a reference potential. SOLUTION: A semiconductor storage device is provided with a bit line connection circuit 4, a pair of bit line connection transistors (the transistor in the following) BCT and /BCT provided on a pair of bit lines BL and /BL on a sense amplifier circuit 2 side of a part to which one ends of respective cell blocks MCB and /MCB adjacent to each other are connected and dummy capacitors CA and /CA provided on at least one of the pair of bit lines BL and /BL on the sense amplifier 2 side of a part to which the transistor BCT and /BCT is connected. The bit line connection circuit 4 is so constituted that operation for switching the transistor BCT and /BCT from an ON state to an OFF state can be performed when a prescribed period passes after read-out operation starts. COPYRIGHT: (C)2009,JPO&INPIT
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