| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which comprises a high-withstand voltage circuit having lead breakdown voltage more than 10 V. SOLUTION: An n-type second well 8 is formed on a p-type first well 3 so as to surround an n-type semiconductor region 7 that constitutes a source of high-withstand voltage nMIS4 of a 18 V system high withstand voltage driving circuit 1HV, and an n-type semiconductor region 7 that constitutes a drain. A p-type channel stopper layer 13 is formed between the n-type second well 8 surrounding the n-type semiconductor region 7 that constitutes a drain, and the n-type second well 8 surrounding the n-type semiconductor region 7 that constitutes a source. A p-type buried layer 16 having the higher impurity concentration than that of the p-type first well 3 or the p-type channel stopper layer 13, is formed in the region whose depth is larger than that of the interface of the n-type second well 8 and the p-type first well 3, and is smaller than that of the interface of the p-type first well 3 and the substrate 2. COPYRIGHT: (C)2009,JPO&INPIT
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