SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER FOR IGBT

摘要

Provided is a method for manufacturing a wafer, by which a pulling speed margin can be increased and a wafer having a reduced p/n junction leak failure ratio with a small resistivity fluctuation can be manufactured. A silicon single crystal wafer composed of silicon single crystal grown by Czochralski method is also provided for IGBT. In the wafer, COP defects and dislocation clusters are eliminated in the entire region in a crystal diameter direction. The wafer has a p/n junction leak failure ratio of 3% or less after heat treatment which simulates heat treatment in the IGBT manufacturing process.