| 摘要 |
PROBLEM TO BE SOLVED: To provide a SiC semiconductor device, in which charges are injected into a zone of a junction termination extension part of a semiconductor device comprising a PN junction so that the effective charge density decreases gradually toward the edge to prevent the voltage breakdown of the edge due to a high electric field. SOLUTION: The device comprises the PN junction. Both p-conducting layers 3 and n-conducting layers 2 of the PN junction constitute doped silicon carbide layers. In the edge of the higher doped conducting layer of the PN junction, the total charge or effective surface charge density decreases gradually from the initial value at the main PN junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge. The electric charge is injected repeatedly while the width of a mask is decreased gradually toward the outermost edge. COPYRIGHT: (C)2009,JPO&INPIT |
