| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the breakdown voltage of the semiconductor device, and to provide its manufacturing method. SOLUTION: The semiconductor device 100 is provided with: an n+ type buffer region 17; an n type drift region 16; a p type base region; a gate electrode 8; a source electrode 4; guard rings 12a and 12b; a channel stopper region 14; and a drain electrode 18. The semiconductor device 100 is further provided with a fluid route 9 on the terminating part inside the semiconductor device 100. The wall surface of the fluid route 9 is covered with an insulating film 10, and the fluid 11 of a low temperature adjusted to a negative potential flows inside. By forming the fluid route 11 inside the semiconductor device 100, an equipotential line around the fluid route 11 is stretched and a depletion layer is widened. The breakdown voltage of the semiconductor device 100 can be improved. COPYRIGHT: (C)2009,JPO&INPIT |
