SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND RESISTOR

摘要

Formed on an insulator are an N- type semiconductor layer having a partial isolator formed on its surface and a P- type semiconductor layer having a partial isolator formed on its surface. Source/drain being P+ type semiconductor layers are provided on the semiconductor layer to form a PMOS transistor. Source/drain being N+ type semiconductor layers are provided on the semiconductor layer to form an NMOS transistor. A pn junction formed by the semiconductor layers is provided in a CMOS transistor made up of the transistors. The pn junction is positioned separately from the partial isolators where the crystal defect is thus very small. Therefore, the leakage current is very low at the pn junction.