| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing thermal stress from being applied to an interlayer insulation film and lower-layer wiring. SOLUTION: A semiconductor wafer W, where a copper oxide 10 is formed on the surface, is installed in a chamber; hydrogen gas and carbon dioxide gas are supplied to the chamber; and a copper oxide 10 is removed from the surface of the semiconductor wafer W. COPYRIGHT: (C)2009,JPO&INPIT
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