| 摘要 |
A memory system (1200) is provided forming a switch element having a first side (114) and a second side (116), forming a cell transistor (106) having a gate terminal (108), forming a memory cell (102), having the switch element (104) and the cell transistor (106), with the gate terminal (108) connected to the second side (1 16), connecting a word line (118) and the memory cell (102) at the first side (114), connecting a bit line (126) and the memory cell (102), and connecting a reference source (124) and the memory cell (102). |
