| 摘要 |
An inductor making method of a semiconductor device is provided to increase the thickness of the metal wiring by additionally plating the copper-electroplated layer electrically connected to the metal wiring through the via hole. The first metal wiring(206) is formed in a trench which is formed by etching a substrate(202). An insulating layer is formed in the front side of the substrate including the first metal wiring. The via hole is formed by etching the insulating layer so that the first metal wiring is exposed. A copper-electroplated layer(214) is formed by using the electrolytic plating method in order to fill the via hole. The second metal wiring is formed in the front side of the insulating layer including the copper-electroplated layer. The width of the first metal wiring is broader than the width of the via hole. The insulating layer is formed with an oxide film(210) and a nitride film(208). |
