| 摘要 |
A semiconductor device and s method of manufacturing the same are provided to prevent carriers generated from the semiconductor device and a PN junction part from diffusing to the transistor. The bipolar transistor is formed on the first conductivity type substrate(3). The second conductive type buried region(4) which is the opposite conductive type of the first conductivity type is reclaimed is buried in the first conductivity type substrate. The first conductivity type buried region(2) is provided to the second conductive type buried region. The first conductivity type body region(17) is formed in the second conductive well(5). A base(10) consisting of the first conductivity type diffusion layer and an emitter(12) consisting of the second conductive spreading layer are formed in the first conductivity type body region. A collector(14) is comprised of the second conductive spreading layer which is separated from the first conductivity type body region.
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