| 摘要 |
PROBLEM TO BE SOLVED: To utilize a circuit that takes out a work function difference between thermal MOS transistors robust against high-temperature operations and to suppress a high-temperature leak current of the entire semiconductor element. SOLUTION: The semiconductor device includes a voltage-sensing circuit having a pair of MOS transistors M1, M2 with difference work functions of gate electrodes and taking out a work function difference between gate electrodes 21 of the MOS transistors M1, M2 as a voltage, and is configured so that the bottom capacitances of source and drain diffusion regions 22 of the MOS transistors M1, M2 can be ignored compared to the fringe capacitances. COPYRIGHT: (C)2009,JPO&INPIT |
