| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor capable of providing a flat panel display which has superior performance at a low cost and with extremely small defective production. SOLUTION: The thin film transistor is constituted by: forming a gate electrode film 2 on a glass substrate 1; forming a silicon nitride film 3 on the glass substrate 1 and gate electrode film 2; forming an amorphous Si film 4 on the silicon nitride film 3; forming a drain electrode film 5 and a source electrode film 6, both comprising Cu-Zn copper alloy, on the amorphous Si film 4 with a barrier film interposed therebetween to each have a base layer of Cu-O-Zn copper alloy film 15; and coating the amorphous Si film 4, drain electrode film 5, and source electrode film 6 with a silicon nitride film 3', wherein the barrier film is formed of a Cu-Si-O-Zb copper alloy film 19. COPYRIGHT: (C)2009,JPO&INPIT
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