发明名称 |
LOW DIELECTRIC (LOW K) BARRIER FILMS WITH OXYGEN DOPING BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) |
摘要 |
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
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申请公布号 |
US2009053902(A1) |
申请公布日期 |
2009.02.26 |
申请号 |
US20080255644 |
申请日期 |
2008.10.21 |
申请人 |
YIM KANG SUB;TAM MELISSA M;SUGIARTO DIAN;LANG CHI-I;LEE PETER WAI-MAN;XIA LI-QUN |
发明人 |
YIM KANG SUB;TAM MELISSA M.;SUGIARTO DIAN;LANG CHI-I;LEE PETER WAI-MAN;XIA LI-QUN |
分类号 |
H01L21/31;C23C16/30;C23C16/40;C23C16/56;H01L21/311;H01L21/312;H01L21/316;H01L21/768 |
主分类号 |
H01L21/31 |
代理机构 |
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地址 |
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