| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device capable of reducing fluctuation in a write current of a TMR element, highly reliable and capable of being downsized. SOLUTION: This manufacturing method of the magnetic memory device including the TMR element includes a step of forming a lower wiring layer, a step of forming an interlayer insulation layer on the lower wiring layer, a step of forming an aperture to expose the lower wiring layer on the interlayer insulation layer, a step of forming a barrier metal layer to cover the internal surfaces of the interlayer insulation layer and the aperture, a step of forming a metallic layer on the barrier metal layer to bury the aperture, a step of grinding off the metallic layer on the barrier metal layer using the barrier metal layer as a stopper to form a wiring layer including the metallic layer buried in the aperture and the barrier metal layer, and an element preparation step of forming the TMR element on the wiring layer. COPYRIGHT: (C)2009,JPO&INPIT
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