| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to relieve trap generation in a gate insulating layer by coupling the fluorine with a gate insulating layer through the drive-in annealing. A gate insulating layer and a gate poly-silicon layer are formed on a semiconductor substrate(S102,S104). A photoresist layer is coated onto a gate poly silicon layer. A photoresist layer is patterned. The fluorine is injected to the polysilicon layer of a PMOS element region of a mask semiconductor substrate through the photoresist layer as a mask(S106). The fluorine is combined with the gate insulating layer through the annealing for the semiconductor substrate(S108). The annealing is performed at a temperature of 900 to 1200 degrees centigrade for 10 to 30 seconds by an RTP method. A gate free doping process of the gate poly-silicon layer is performed(S110). The gate insulating layer is the SiON layer.</p> |
