| 摘要 |
The present invention is related to a method for forming at least one opening in an organic-containing insulating layer comprising the step of: covering said organic-containing insulating layer with a bilayer, said bilayer comprising a resist hard mask layer, being formed on said organic-containing insulating layer, and a resist layer being formed on said resist hard mask layer, patterning said bilayer, creating said opening by plasma etching said organic-containing insulating layer in a reaction chamber containing a gaseous mixture, said gaseous mixture comprising an oxygen-containing gas and an inert gas, said inert gas and said oxygen-containing gas being present in said gaseous mixture at a predetermined ratio, said ratio being chosen such that spontaneous etching is substantially avoided. <IMAGE> |
